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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF85N06M SFF85N06Z
55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET
Features:
* * * * * * * * * Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRFP064 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit
DESIGNER'S DATA SHEET
TO-254 and TO-254Z Note 1: maximum current limited by package configuration
Maximum Ratings
Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case)
TO-254 (M) TO-254Z (Z)
Symbol
VDSS VGS @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C ID1 ID2 ID3 ID4 IAR EAR PD TOP & TSTG R0JC
Value
60 20 55 (note 1) 55 (note 1) 175 75 75 280 210 -55 to +175 0.7 (typ 0.55)
Units
V V A A A mJ W C C/W
PIN 3
PIN 3
PIN 2
PIN 2
PIN 1
PIN 1
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0020A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4/
SFF85N06M SFF85N06Z
Symbol
VGS = 0V, ID = 250A VGS = 10V, ID = 30A, Tj= 25oC VGS = 4.5V, ID = 20A, Tj= 25oC VGS = 10V, ID = 30A, Tj=125oC VGS = 10V, ID = 30A, Tj= 200oC VDS = VGS, ID = 250A VGS = 20V VDS = 48V, VGS = 0V, Tj = 25oC VDS = 48V, VGS = 0V, Tj = 125oC VDS = 48V, VGS = 0V, Tj = 200oC VDS = 15V, ID = 30A, Tj = 25oC VGS = 10V VDS = 30V ID = 110A VGS = 10V VDS = 30V ID = 110A RG = 2.5O IF = 110A, VGS = 0V IF = 100A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS
Electrical Characteristics
Min
60 -- -- -- -- 1.0 -- -- -- 25 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 5.0 7.0 9.0 10.5 -- -- -- -- -- 150 30 50 25 135 85 150 1.1 75 2.5 0.1 7500 1050 700 -- 7.0 -- -- -- 3.0 100 1 50 10 -- 225 -- -- 35 200 125 225 1.5 125 5 0.25 -- -- -- V
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
RDS(on)
mO
Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS(th) IGSS IDSS gfs Qg Q gs Q gd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss
V nA A A mA Mho nC
nsec
V nsec A C pF
NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z)
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0020A
DOC

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